-
1
-
2
An Ohmic model for charge transport in a semiconductor
Pasadena, Calif. : [Springfield, Va.] : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology ; [National Technical Information Service], 1990Format: Government Document Book
-
3
Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide
Washington, D.C. : [Springfield, Va.] : National Aeronautics and Space Administration, Scientific and Technical Information Branch ; [For sale by the National Technical Information Service], 1983Format: Government Document Book
-
4
Silicon front-end technology--materials processing and modelling
Warrendale, Pa. : Materials Research Society, 1998Format: Book
-
5
Ion implantation technology : 16th International Conference on Ion Implantation Technology, IIT 2006, Marseille, France, 11-16 June 2006
Melville, N.Y. : American Institute of Physics, 2006Format: Conference Proceeding Book
-
6
Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon
Gaithersburg, MD :; Gaithersburg, MD : U.S. Dept. of Commerce, National Bureau of Standards, 1987Format: Government Document Book
-
7
Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.
Pittsburgh, Pa. : Materials Research Society, 1987Format: Book
-
8
The metal non-metal transition in disordered systems : proceedings of the nineteenth Scottish Universities Summer School in Physics, St. Andrews, August 1978
Edinburgh : Scottish Universities Summer School in Physics, 1978Format: Conference Proceeding Book
-
9
Laser assisted deposition, etching, and doping : January 26-27, 1984, Los Angeles, California
Bellingham, Wash. : SPIE--the International Society for Optical Engineering, 1984Format: Book
-
10
Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Pittsburgh, Pa. : Materials Research Society, 1997Format: Book
-
11
Doping in III-V semiconductors
Cambridge [England] ; New York, NY, USA : Cambridge University Press, 1993Format: Book
-
12
Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
Pittsburgh, Pa. : Materials Research Society, 1987Format: Book
-
13
-
14
-
15
Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, USA
Pittsburgh, Pa. : Materials, Research Society, 1986Format: Book
-
16
In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.
Pittsburgh, Pa. : Materials Research Society, 1990Format: Book
-
17
On the influence of substrate doping on the induced gate thermal noise of mosfets
1983Format: Thesis Book
-
18
Si front-end processing : physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
Warrendale, Penn. : Materials Research Society, 1999Format: Book
-
19
Ion implantation : equipment and techniques : proceedings of the Fourth International Conference, Berchtesgaden, Fed. Rep. of Germany, September 13-17, 1982
Berlin ; New York : Springer-Verlag, 1983Format: Conference Proceeding Book
-
20
The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon
Washington, D.C. :; Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1981Format: Government Document Book