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  1. 1

    Minority-carrier lifetime in InP as a function of light bias

    [Washington, DC] : [Springfield, Va.] : National Aeronautics and Space Administration ; [National Technical Information Service, distributor], 1994
    Format: Government Document Book


  2. 2

    Native defect related optical properties of ZnGeP₂

    [Washington, DC] : [Springfield, Va.] : [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1994
    Format: Government Document Book


  3. 3

    Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures

    [Washington, DC] : [Springfield, Va.] : [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1996
    Format: Government Document Book


  4. 4

    Variations of electrophotoluminescence phenomena with frequency of applied field by Olson, Keith William

    Oak Ridge, Tenn. : United States Atomic Energy Commission, Technical Information Service, 1954
    Format: Government Document Book


  5. 5

    Performance demonstrations of zinc sulfide and strontium aluminate photoluminescent floor proximity escape path marking systems by McLean, Garnet A., 1947-

    Washington, D.C. : Springfield, Va. : U.S. Dept. of Transportation, Federal Aviation Administration, Office of Aviation Medicine ; Available to the public through the National Technical Information Service, 1998
    Format: Government Document Book


  6. 6

    Performance demonstrations of zinc sulfide and strontium aluminate photoluminescent floor proximity escape path marking systems by McLean, Garnet A., 1947-

    Washington, D.C. : Springfield, Va. :; Washington, D.C. : Springfield, Va. : U.S. Dept. of Transportation, Federal Aviation Administration, Office of Aviation Medicine ; Available to the public through the National Technical Information Service, 1998
    Format: Government Document Book


  7. 7

    Performance demonstrations of zinc sulfide and strontium aluminate photoluminescent floor proximity escape path marking systems by McLean, Garnet A., 1947-

    Washington, D.C. : Springfield, Va. : U.S. Federal Aviation Administration, Office of Aviation Medicine ; Available through the National Technical Information Service, 1998
    Format: Government Document Book


  8. 8

    Yield of radioluminescence of organic matters by Chizhikova, Z. A.

    [Oak Ridge, Tenn.] : U.S. Atomic Energy Commission, Division of Technical Information, 1962
    Format: Government Document Book


  9. 9

    Proceedings of the 12th International Conference on Ternary and Multinary Compounds : ICTMC-12 : Hsin-chu, Taiwan, R.O.C., March 13-17, 2000

    Tokyo : Japan Society of Applied Physics through The Institute of Pure and Applied Physics, 2000
    Format: Conference Proceeding Book


  10. 10

    Measurement of photoluminescence

    New York : Academic Press, 1982
    Format: Book


  11. 11

    Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures by Raisky, O. Y.

    [Washington, D.C.] : [National Aeronautics and Space Administration], 1997
    Format: Government Document Book


  12. 12

    Simultaneous luminescence pressure and temperature measurement system for hypersonic wind tunnels by Buck, Gregory M.

    Hampton, Va. : [Springfield, Va.] : National Aeronautics and Space Administration, Langley Research Center ; [For sale by the National Technical Information Service], 1995
    Format: Government Document Book


  13. 13

    Photoluminescence of solutions. With applications to photochemistry and analytical chemistry. by Parker, C. A. (Cecil Allen)

    Amsterdam, New York Elsevier Pub. Co., 1968
    Format: Book


  14. 14

    Recovery of the 931-A photomultiplier tube from space-charged saturation by Orr, Clarence W.

    Los Alamos, N.M. : Los Alamos Scientific Laboratory of the University of California, 1956
    Format: Government Document Book


  15. 15

    Seeded physical vapor transport of cadmium-zinc telluride crystals : growth and characterization

    [New York] : [Washington, D.C.] : [Springfield, Va.] : Elsevier ; [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1997
    Format: Government Document Book


  16. 16

    Defect characterization in ZnGeP₂ by time-resolved photoluminescence

    [Washington, D.C.] : [Springfield, Va.] : [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1995
    Format: Government Document Book