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1
Minority-carrier lifetime in InP as a function of light bias
[Washington, DC] : [Springfield, Va.] : National Aeronautics and Space Administration ; [National Technical Information Service, distributor], 1994Format: Government Document Book
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2
Native defect related optical properties of ZnGeP₂
[Washington, DC] : [Springfield, Va.] : [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1994Format: Government Document Book
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3
Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures
[Washington, DC] : [Springfield, Va.] : [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1996Format: Government Document Book
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4
Variations of electrophotoluminescence phenomena with frequency of applied field
Oak Ridge, Tenn. : United States Atomic Energy Commission, Technical Information Service, 1954Format: Government Document Book
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5
Performance demonstrations of zinc sulfide and strontium aluminate photoluminescent floor proximity escape path marking systems
Washington, D.C. : Springfield, Va. : U.S. Dept. of Transportation, Federal Aviation Administration, Office of Aviation Medicine ; Available to the public through the National Technical Information Service, 1998Format: Government Document Book
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6
Performance demonstrations of zinc sulfide and strontium aluminate photoluminescent floor proximity escape path marking systems
Washington, D.C. : Springfield, Va. :; Washington, D.C. : Springfield, Va. : U.S. Dept. of Transportation, Federal Aviation Administration, Office of Aviation Medicine ; Available to the public through the National Technical Information Service, 1998Format: Government Document Book
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7
Performance demonstrations of zinc sulfide and strontium aluminate photoluminescent floor proximity escape path marking systems
Washington, D.C. : Springfield, Va. : U.S. Federal Aviation Administration, Office of Aviation Medicine ; Available through the National Technical Information Service, 1998Format: Government Document Book
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8
Yield of radioluminescence of organic matters
[Oak Ridge, Tenn.] : U.S. Atomic Energy Commission, Division of Technical Information, 1962Format: Government Document Book
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9
Proceedings of the 12th International Conference on Ternary and Multinary Compounds : ICTMC-12 : Hsin-chu, Taiwan, R.O.C., March 13-17, 2000
Tokyo : Japan Society of Applied Physics through The Institute of Pure and Applied Physics, 2000Format: Conference Proceeding Book
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10
Measurement of photoluminescence
New York : Academic Press, 1982Format: Book
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11
Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures
[Washington, D.C.] : [National Aeronautics and Space Administration], 1997Format: Government Document Book
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12
Simultaneous luminescence pressure and temperature measurement system for hypersonic wind tunnels
Hampton, Va. : [Springfield, Va.] : National Aeronautics and Space Administration, Langley Research Center ; [For sale by the National Technical Information Service], 1995Format: Government Document Book
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13
Photoluminescence of solutions. With applications to photochemistry and analytical chemistry.
Amsterdam, New York Elsevier Pub. Co., 1968Format: Book
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14
Recovery of the 931-A photomultiplier tube from space-charged saturation
Los Alamos, N.M. : Los Alamos Scientific Laboratory of the University of California, 1956Format: Government Document Book
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15
Seeded physical vapor transport of cadmium-zinc telluride crystals : growth and characterization
[New York] : [Washington, D.C.] : [Springfield, Va.] : Elsevier ; [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1997Format: Government Document Book
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16
Defect characterization in ZnGeP₂ by time-resolved photoluminescence
[Washington, D.C.] : [Springfield, Va.] : [National Aeronautics and Space Administration] ; [National Technical Information Service, distributor], 1995Format: Government Document Book
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