|
|
|
|
LEADER |
00000cam a2200000 a 4500 |
001 |
e0836ffd-4a91-4eaa-9d20-ab673ba67452 |
005 |
20240707000000.0 |
008 |
900924s1991 maua b 001 0 eng |
010 |
|
|
|a 90019259
|
015 |
|
|
|a GB9129353
|2 bnb
|
016 |
7 |
|
|a B9101639
|2 bccb
|
016 |
7 |
|
|a 079-23909
|2 uk
|
019 |
|
|
|a 26359518
|
020 |
|
|
|a 0792390962
|q (acid-free paper)
|
020 |
|
|
|a 9780792390961
|q (acid-free paper)
|
035 |
|
|
|a (MnManS)002655059SYS01
|
035 |
|
|
|a ocm22543618
|
035 |
|
|
|a (EXLNZ-01MNPALS_NETWORK)9910027428704266
|
040 |
|
|
|a DLC
|b eng
|c DLC
|d UKM
|d BAKER
|d NLGGC
|d BTCTA
|d YDXCP
|d UQ1
|d DEBBG
|d OCLCQ
|d ZWZ
|d BDX
|d GBVCP
|d OCLCF
|d OCLCO
|d OCLCQ
|d OCLCO
|d I8M
|d OCLCO
|
049 |
|
|
|a MNMI
|
050 |
0 |
0 |
|a TK7874
|b .C425 1991
|
082 |
0 |
0 |
|a 621.39/732
|2 20
|
084 |
|
|
|a ELT 435f
|2 stub
|
084 |
|
|
|a 53.52
|2 bcl
|
100 |
1 |
|
|a Chang, Zhong Yuan.
|
245 |
1 |
0 |
|a Low-noise wide-band amplifiers in bipolar and CMOS technologies /
|c by Zhong Yuan Chang, Willy M.C. Sansen.
|
260 |
|
|
|a Boston :
|b Kluwer Academic Publishers,
|c ©1991.
|
300 |
|
|
|a vii, 212 pages :
|b illustrations ;
|c 25 cm.
|
336 |
|
|
|a text
|b txt
|2 rdacontent
|
337 |
|
|
|a unmediated
|b n
|2 rdamedia
|
338 |
|
|
|a volume
|b nc
|2 rdacarrier
|
490 |
1 |
|
|a The Kluwer international series in engineering and computer science ;
|v SECS 117
|
504 |
|
|
|a Includes bibliographical references and index.
|
650 |
|
0 |
|a Linear integrated circuits
|x Design and construction.
|
650 |
|
0 |
|a Broadband amplifiers.
|
650 |
|
0 |
|a Metal oxide semiconductors, Complementary.
|
650 |
|
0 |
|a Bipolar transistors.
|
650 |
|
7 |
|a Bipolar transistors.
|2 fast
|0 (OCoLC)fst00832874
|
650 |
|
7 |
|a Broadband amplifiers.
|2 fast
|0 (OCoLC)fst00839142
|
650 |
|
7 |
|a Linear integrated circuits
|x Design and construction.
|2 fast
|0 (OCoLC)fst00999078
|
650 |
|
7 |
|a Metal oxide semiconductors, Complementary.
|2 fast
|0 (OCoLC)fst01017635
|
650 |
1 |
7 |
|a Amplificateur à large bande.
|2 rasuqam
|
650 |
1 |
7 |
|a CMOS (Circuit intégré)
|2 rasuqam
|
650 |
|
7 |
|a Bruit électromagnétique.
|2 rasuqam
|
650 |
|
7 |
|a Circuit intégré linéaire.
|2 rasuqam
|
650 |
|
7 |
|a Conception technique.
|2 rasuqam
|
650 |
1 |
7 |
|a Transistor bipolaire.
|2 rasuqam
|
650 |
|
7 |
|a Circuits intégrés.
|2 ram
|
650 |
|
7 |
|a Circuits intégrés bipolaires.
|2 ram
|
650 |
|
7 |
|a MOS complémentaires.
|2 ram
|
650 |
|
7 |
|a Breitbandverstärker.
|2 gnd
|
650 |
|
4 |
|a Semiconductores complementarios de metal-óxido.
|
653 |
|
|
|a Circuits
|a Design
|
700 |
1 |
|
|a Sansen, Willy M. C.
|
830 |
|
0 |
|a Kluwer international series in engineering and computer science ;
|v SECS 117.
|
999 |
1 |
0 |
|i e0836ffd-4a91-4eaa-9d20-ab673ba67452
|l 990026550590104301
|s US-MNMANS
|m low_noise_wide_band_amplifiers_in_bipolar_and_cmos_technologies____________1991_______kluwea________________________________________chang__zhong_yuan__________________p
|
999 |
1 |
1 |
|l 990026550590104301
|s ISIL:US-MNMANS
|i Minnesota State University, Mankato
|t BKS
|a GEN
|c TK7874 .C425 1991
|b 30101011272705
|x BOOK
|y 2369646910004301
|p LOANABLE
|