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|a 0890060908
|z 0-89006-118-11
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|a (OCoLC)8546565
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|a TK7871.95
|b .G27 1982
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082 |
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|
|a 621.3815/284
|2 19
|
245 |
0 |
0 |
|a GaAs FET principles and technology /
|c James V. DiLorenzo, editor in chief, Deen D. Khandelwal, associate editor.
|
260 |
|
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|a Dedham, Mass. :
|b Artech House,
|c ©1982.
|
300 |
|
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|a 773 pages :
|b illustrations ;
|c 24 cm
|
336 |
|
|
|a text
|b txt
|2 rdacontent
|
337 |
|
|
|a unmediated
|b n
|2 rdamedia
|
338 |
|
|
|a volume
|b nc
|2 rdacarrier
|
504 |
|
|
|a Includes bibliographical references and index.
|
650 |
|
0 |
|a Field-effect transistors
|
650 |
|
0 |
|a Gallium arsenide
|
700 |
1 |
|
|a DiLorenzo, James V.
|
700 |
1 |
|
|a Khandelwal, Deen D.
|
830 |
|
0 |
|a Artech House microwave library
|
999 |
1 |
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|m gaas_fet_principles_and_technology_________________________________________1982_______arteca___________________________________________________________________________p
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999 |
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|l 9948954590001701
|s ISIL:US-MNU
|i University of Minnesota
|t BKS
|a TSCIGEN
|c TK7871.95 .G27 1982
|d LCC
|b 31951D01492897Q
|x BOOK
|y 23461490030001701
|p LOANABLE
|